| PART |
Description |
Maker |
| APT50GF60B2RD APT50GF60LRD |
Fast IGBT & FRED 600V 80A
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
|
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
|
| SKP10N60A SKB10N60A SKW10N60A |
Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode
IGBTs & DuoPacks - 10A 600V TO220AB IGBT Diode
IGBTs & DuoPacks - 10A 600V TO247AC IGBT Diode
IGBTs & DuoPacks - 10A 600V TO263AB SMD IGBT Diode
|
Infineon Technologies AG
|
| SGB06N60 SGD06N60 SGP06N60 Q67040-S4450 SGU06N60 Q |
Heat Sink; Package/Case:TO-220; Thermal Resistance:13.4 C/W; Mounting Type:Through Hole; Length:25.4mm; Height:12.7mm; Width:34.92mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes
Fast IGBT in NPT-technology
IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT
IGBTs & DuoPacks - 6A 600V TO252AA SMD IGBT
IGBTs & DuoPacks - 6A 600V TO220AB IGBT
|
INFINEON[Infineon Technologies AG]
|
| SGB02N60 SGP02N60 Q67040-S4504 Q67040-S4505 Q67041 |
FAST IGBT IN NPT TECHNOLOGY 快速IGBT技术在不扩散核武器条约
IGBTs & DuoPacks - 2A 600V TO263AB SMD IGBT
IGBTs & DuoPacks - 2A 600V TO 252AA SMD IGBT
IGBTs & DuoPacks - 2A 600V TO220AB IGBT
|
INFINEON[Infineon Technologies AG]
|
| APT50GF60HR |
Fast IGBT 600V 55A
The Fast IGBT is a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| QIQ0645002 |
Low side Chopper IGBT Module 600V 450A IGBT / 600V 450A Fast Diode
|
POWEREX[Powerex Power Semiconductors]
|
| RURG8060 FN3388 |
80A/ 600V Ultrafast Diode
80A, 600V Ultrafast Diode
80A 600V Ultrafast Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| APT11GF120BRDQ1 APT11GF120BRDQ1G |
FAST IGBT & FRED
Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 11; 25 A, 1200 V, N-CHANNEL IGBT, TO-247AC
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| STGB6NC60HDT4 STGP6NC60HD STGB6NC60HD-1 STGB6NC60H |
N-channel 600V - 7A - I2PAK / D2PAK / TO-220 / TO-220FP Very fast PowerMESH IGBT
N-channel 600V - 7A - I2PAK / D2PAK / TO-220 / TO-220FP Very fast PowerMESH垄芒 IGBT
N-channel 600V - 7A - I2PAK / D2PAK / TO-220 / TO-220FP Very fast PowerMESH⑩ IGBT
|
STMicroelectronics
|
| STGD10NC60H GD10NC60H |
N-channel 10A - 600V - DPAK Very fast PowerMESH?/a> IGBT
N-channel 10A - 600V - DPAK Very fast PowerMESH⑩ IGBT
N-channel 10A - 600V - DPAK Very fast PowerMESH IGBT
|
STMicroelectronics
|
| STGW39NC60VD07 STGW39NC60VD |
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH⑩ IGBT
|
STMicroelectronics
|
